052-6223 rev f 3-2012 APT60GT60BRG apt60gt60srg 600v the thunderbolt igbt ? is a new generation of high voltage power igbts. using non-punch through technology the thunderbolt igbt ? offers superior ruggedness and ultrafast switching speed. low forward voltage drop high freq. switching to 150khz low tail current ultra low leakage current avalanche rated rbsoa and scsoa rated rohs compliant thunderbolt igbt ? symbol parameter apt60gt60br_srg unit v ces collector-emitter voltage 600 volts v ge gate emitter voltage 20 i c1 continuous collector current @ t c = 25c 4 100 amps i c2 continuous collector current @ t c = 105c 60 i cm pulsed collector current 1 @ t c = 25c 360 i lm rbsoa clamped inductive load current r g = 11 , t c = 25c 360 e as single pulse avalanche energy 2 65 mj p d total power dissipation 500 watts t j , t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed . microsemi website - http://www.microsemi.com t o -2 47 g c e d 3 pa k g c e (s) (b) maxmum ratings symbol characteristic / test conditions min typ max unit bv ces collector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) 600 volts v ge (th) gate threshold voltage (v ce = v ge , i c = 500 a, t j = 25c) 345 v ce (on) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 25c) 1.6 2.2 2.5 collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 125c) 2.8 i ces collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 80 a collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2000 i ges gate-emitter leakage current (v ge = 20v, v ce = 0v) 100 na static electrical characteristics downloaded from: http:///
052-6223 rev f 3-2012 apt60gt60br_srg symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.5v ces i c = i c2 r g = 10 inductive switching (150c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 t j = +150c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 5 t j = +25c v ce = 20v, i c = i c2 min typ max 3125 3590 310 450 180 310 275 410 19 30 120 180 20 40 95 190 315 470 245 490 25 50 59 120 430 650 65 130 1.6 3.2 2.4 4.8 4.0 8.0 26 50 63 125 395 590 68 140 3.4 7.0 4 unit pf nc ns ns mj ns mj s unit c/w oz gm lbin nm min typ max 0.25 40 0.22 6.1 10 1.1 characteristicjunction to case junction to ambient package weight mounting torque ( using a 6-32 or 3mm binding head machine screw ) symbol r jc r ja w t torque thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 i c = i c2 , r ge = 25 , l = 36 h, t j = 25c 3 see mil-std-750 method 3471 4 the maximum current is limited by lead temperature. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
052-6223 rev f 3-2012 apt60gt60br_srg v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 1, typical output characteristics (t j = 25c) figure 2, typical output characteristics (t j = 150c) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 3, typical output characteristics @ v ge = 15v figure 4, maximum forward safe operating area v ce , collector-to-emitter voltage (volts) q g , total gate charge (nc) figure 5, typical capacitance vs collector-to-emitter voltage figure 6, gate charges vs gate-to-emitter voltage rectangular pulse duration (seconds) figure 7, maximum effective transient thermal impedance, junction-to-case vs pulse duration c, capacitance (pf) i c , collector current (amperes) i c , collector current (amperes) v ge , gate-to-emitter voltage (volts) i c , collector current (amperes) i c , collector current (amperes) t c =+25c t j =+150c single pulse i c = i c2 t j = +25c f = 1mhz v ce =480v v ce =300v 7v 7v c ies c res 9v 6v 9v 8v 6v note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.05 d=0.5 0.2 0.02 0.01 single pulse c oes 0 4 8 12 16 20 0 4 8 12 16 20 0 1 2 3 4 5 1 5 10 50 100 600 0.01 0.1 1.0 10 50 0 100 200 300 400 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 z jc , thermal impedance (c/w) v ge =17, 15, 13, 11 & 10v v ce =120v t c =-55c t c =+25c 0.1 operation limited by v ce (sat) 100 s 1ms10ms 160120 8040 0 232100 10 51 2016 12 84 0 160120 8040 0 160120 8040 0 10,000 1,000 100 v ge =17, 15, 13, 11 & 10v 8v 250 sec. pulse test v ge = 15v 5v t c =+150c 0.50.1 0.050.01 0.0050.001 downloaded from: http:///
052-6223 rev f 3-2012 apt60gt60br_srg v cc = 0.66 v ces v ge = +15v t j = +25c i c = i c2 v cc = 0.66 v ces v ge = +15v t j = +125c r g = 10 v cc = 0.66 v ces v ge = +15v r g = 10 i c1 0.5 i c2 i c2 i c1 e on e off e on e off 0.5 i c2 i c2 i c , collector current (amperes) total switching energy losses (mj) bv ces , collector-to-emitter breakdown v ce (sat), collector-to-emitter voltage (normalized) saturation voltage (volts) switching energy losses (mj) switching energy losses (mj) i c , collector current (amperes) t j , junction temperature (c) t c , case temperature (c) figure 8, typical v ce (sat) voltage vs junction temperature figure 9, maximum collector current vs case temperature t j , junction temperature (c) r g , gate resistance (ohms) figure 10, breakdown voltage vs junction temperature figure 11, typical switching energy losses vs gate resistance t j , junction temperature (c) i c , collector current (amperes) figure 12, typical switching energy losses vs. junction temperature figure 13, typical switching energy losses vs collector current f, frequency (khz) figure 14,typical load current vs frequency -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 0.1 1.0 10 100 1000 4.03.5 3.0 2.5 2.0 1.5 1.0 1.2 1.1 1 0.90.8 0.7 2010 1 120 10 1 120 9060 30 0 8.06.0 4.0 2.0 0 2.52.0 1.5 1.0 0.5 0 for both: duty cycle = 50% t j = +125c t sink = +90c gate drive as speci ? ed power dissapation = 140w i load = i rms of fundamental downloaded from: http:///
052-6223 rev f 3-2012 *driver same type as d.u.t. v cc = 0.66 v ces e ts = e on + e off v ce (on) t d (off) t d (on) t f t r 1 figure 15, switching loss test circuit and waveforms figure 16, resistive switching time test circuit and waveforms 2 v cc r g r l = .5 v ces i c2 10% 90% v ge (on) v ce (off) v ge (off) 2 1 from gate drive circuitry d.u.t. b i c i c 90%10% 90%10% 10% 90% e off t f t d (off) t d (on) t r e on i c v clamp 100uh v charge a a b d.u.t. driver* v c a r g v c v c d.u.t. v ce (sat) t=2us to - 247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline e1 sac: tin, silver, copper e3 sac: tin, silver, copper downloaded from: http:///
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